TCS1204
40V P-Channel Enhancement Mode MOSFET
产品描述
T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications.
主要特点
- VDS =-40V，IDR=-14A
- DS(ON)(Typ.)=12mΩ @VGSR=-4.5VDS(ON)(Typ.)=8.5mΩ @VGS
- High power and current handing capability=-10V
- Lead free product is acquired
- Surface mount package
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1204_H | -55°C to +150°C | SOP-8 | 4000 |
