TCS1202
100V N-Channel Enhancement Mode MOSFET
产品描述
The TCS1202 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
主要特点
VDS =100V，ID=2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1202_C | -55°C to +150°C | SOT-23-3L | 3000 |
