TCS1415
N-Channel Enhancement Mode Power MOSFET
产品描述
The TCS1415 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
主要特点
- VDS =40V,ID =15A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
典型应用图
订购资讯
| Device | Device Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|
| TCS1415-H | SOP-8 | Ø330mm | 12mm | 2500 units |
